Qualcomm’s upcoming flagship chipset for next year may feature LPDDR6 RAM and UFS 5.0 storage.
As the first batch of smartphones powered by the Snapdragon 8 Elite Gen 5 starts reaching consumers, leaks surrounding its successor — the Snapdragon 8 Elite Gen 6 — are already emerging. Expectedly, the reports indicate that this processor could shatter not just performance records, but also pricing standards.
Snapdragon 8 Elite Gen 6 may introduce LPDDR6 RAM and UFS 5.0 storage
The latest leak, shared by Digital Chat Station on Weibo, claims that Qualcomm might jump straight to TSMC’s enhanced N2P (2nm+) fabrication process for the Snapdragon 8 Elite Gen 6. According to the leak, the chip carries the model number SM8975.
This represents a significant upgrade from the N3P (3nm+) process used in the Snapdragon 8 Elite Gen 5, potentially delivering improved performance and power efficiency by bypassing the N2 node entirely.
In addition, the chipset could support next-generation memory and storage technologies, including LPDDR6 RAM and UFS 5.0 storage, which would allow for faster data speeds and smoother performance. However, actual implementation may vary depending on the smartphone manufacturers.
That said, these upgrades might lead to higher production costs. The source notes that adopting an advanced manufacturing process like N2P could result in increased prices for Android flagship devices launching in 2026 and later.
While the Snapdragon 8 Elite Gen 5 is only starting to debut in new devices, these initial leaks suggest that Qualcomm is already preparing major performance and efficiency improvements for the Snapdragon 8 Elite Gen 6. The chipset is expected to power premium smartphones such as the Samsung Galaxy S27 series, OnePlus 16, iQOO 16, and Realme GT 9 Pro.
More concrete details about the Snapdragon 8 Elite Gen 6 are likely to emerge in the second half of 2026, gradually revealing its capabilities. Stay tuned for continuous updates on upcoming Qualcomm processors.
